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Thin barium titanate(BT), lead zirconate titanate(PZT), barium strontium titanate(BST) films are being developed for use in microelectronics, electromechanical and optoelectronic applications. Thin BaTiO3, Pb(ZrTi)O3 and (BaSr)TiO3 film capacitor devices were fabricated using RF sputtering techniques. The typical dielectric constant of these film capacitors was in the range of 300 to 1140. These film capacitors had dissipation factors between 0.2% to 0.6 % before annealing and 4-6% after annealing. The film capacitors have breakdown voltages in the range of 1×105 V/cm to 1.2×106 V/cm. The resistivity was in the range of 1010 to 1012 ohm-cm before annealing and 1013 to 1014 ohm-cm after annealing. The capacitance of films produced to-date had little dependence on frequency. Thermal cycling in the temperature range of 50 to 300°C had very limited impact on the capacitance and dissipation factor. Measurements of dielectric and material properties are reported.

Thin barium titanate (BT) film is being developed for use in microelectronics, electromechanical and optoelectronic applications. For this study rolled thin BaTiO3 film capacitors were fabricated using RF sputtering techniques. Capacitor grade aluminum foil was used as the bottom electrode. The top electrode was sputtered aluminum film, which was used for quick measurement purposes. The as-deposited ceramic film on aluminum foil was very flexible at room temperature and could be easily rolled. The foil was masked to preserve side electrodes. The typical dissipation factors (DF) of these BT film capacitors were in the range of 0.002 to 0.005. A low dissipation factor is extremely important for pulsed power or high power filtering applications. These BT film capacitors had a parallel resistance of 15 to 20 mega-ohm. With the thickness of the film being 8,000 Å, the average dielectric constant was calculated to be 25. The insulation resistance was about 138 giga-ohm.