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The development of tunable diode laser systems in the 2 - 5 μm spectral region will have numerous applications for trace gas detection. To date, the development of such systems has been hampered by the difficulties of epitaxial growth, and device processing in the case of the Sb-based materials system. One of the compounding factors in this materials system is the use of aluminum containing compounds in the laser diode cladding layers. This makes the regrowth steps used in traditional lasers very difficult. As an alternative approach we are developing laterally coupled antimonide based lasers structures that do not require the regrowth steps. In this paper, the materials growth, device processing and development of the necessary drive electronics for an antimony based tunable diode laser system are discussed.

The current status of III-V semiconductor diode lasers emitting between 1 -5 μm wavelengths to be used as light sources for absorption spectroscopy is reviewed. The emission wavelength of the laser is chosen to coincide with the primary absorption line of a molecule or one of its many overtones. The lasers, with a single longitudinal mode emission, are wavelength tuned over several angstroms by modulating the drive current of the device. This sweeping of the wavelength leads to the nomenclature tunable diode laser or TDL. Single mode distributed feedback (DFB) strained layer InGaAs(P) lasers grown on InP substrates with emission wavelengths from 1.2 to 2.06 μm have been developed at JPL, and several devices will be used for planetary atmospheric studies for the first time.