SiC Devices for Space Electronics: Phase I - High Voltage, Temperature Hard Contacts 941227
High voltage Schottky diodes have been fabricated on 3C-SiC films grown on Si substrates. A Ni metallization process has been developed to fabricate both rectifying and ohmic contacts to SiC by controlling the post-annealing temperature. A high voltage (>150V) breakdown has been obtained at room temperature from the SiC Schottky diode. The Ni-SiC Schottky junction shows a thermal resistance for temperatures as high as 600°C. This technology has good potential for monolithic integration of SiC high power devices and Si integrated circuits.
Citation: Su, J. and Steckl, A., "SiC Devices for Space Electronics: Phase I - High Voltage, Temperature Hard Contacts," SAE Technical Paper 941227, 1994, https://doi.org/10.4271/941227. Download Citation
Author(s):
J. N. Su, A. J. Steckl
Affiliated:
University of Cincinnati
Pages: 6
Event:
Aerospace Atlantic Conference & Exposition
ISSN:
0148-7191
e-ISSN:
2688-3627
Related Topics:
High voltage systems
Fabrication
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