Phase Diagram and Electrical Behavior of Silicon-Rich Iridium Silicide Compounds 929423
The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis, metalography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only four distinct compositions: IrSi, Ir3Si4, Ir3Si5 and IrSi∼3. The existence of Ir4Si5 could not be confirmed in this study, even though the crystal structure has been previously reported. Differential thermal analysis (DTA) in conjunction with X-ray powder diffraction confirm polymorphism in IrSi∼3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 83±1 atomic % silicon was observed between IrSi∼3 and silicon. Ir3Si4 exhibits distinct metallic behavior while Ir3Si5 is semiconducting. Both and IrSi and IrSi∼3 exhibit nearly temperature independent electrical resistivities on the order of 5-10 × 10-6 Ω-m.
Citation: Allevato, C. and Vining, C., "Phase Diagram and Electrical Behavior of Silicon-Rich Iridium Silicide Compounds," SAE Technical Paper 929423, 1992, https://doi.org/10.4271/929423. Download Citation
Author(s):
C. E. Allevato, Cronin B. Vining
Affiliated:
Jet Propulsion Lab.
Pages: 5
Event:
27th Intersociety Energy Conversion Engineering Conference (1992)
ISSN:
0148-7191
e-ISSN:
2688-3627
Related Topics:
Conductivity
Alloys
SAE MOBILUS
Subscribers can view annotate, and download all of SAE's content.
Learn More »