The Importance of Analysis of Electrical Parameters for Design of Analog Circuits in Automotive Modules 2012-36-0209

The intention of this paper is to discuss the importance of analysis of some electrical parameters in order to design analog circuits in electronic modules, including automotive ones. Today, the challenge is to have devices which consume less power, high performance and higher integration density, so that it explains why such analysis is crucial to achieve better performances and meet the desired results. To understand how this analysis of electrical parameters are important and show how the devices can have better performance, this paper brings an experimental comparative study between the Wave MOSFET layout style ("S" shape gate geometry) and the Conventional MOSFET (conventional rectangular gate geometry usually called as Bulk) counterpart in order to verify and quantify the benefits that the Wave structure can bring to improve the performance of devices in analog circuits, especially in terms of the drain current in the saturation region (I_DSat), the transconductance (g_m), the ratio of transconductance over the drain current (g_m/I_DS) as a function of the ratio of the drain current normalized by the geometric factor (I_DS/f_g), the frequency response [voltage gain (A_v) and the unit voltage gain frequency (f_T)].

Verifying the comparison between the Wave MOSFET and the Conventional MOSFET on this paper the designer will take a chance to understand the analysis that can be executed for any other device.