Intelligent Power IC for Automotive Electronics, Using Trench-Dielectric-Isolation Technology 2005-01-0564
We developed an intelligent power IC suitable for automotive applications, which integrated CMOS, Bipolar and LDMOS and which was fabricated on 0.65 μm design rule process. This IC employs trench-dielectric-isolation (TD) technology and power device technology that improves the ESD (Electrostatic Discharge) robustness. TD technology employing an SOI (Silicon On Insulator) wafer and deep trench isolation realizes very narrow isolation width with no parasitic device. It enables the easier mixing of various circuits on a single chip with high integration density. The power device technology of improves ESD robustness, enables reduction in the number of protection devices in automotive Electronic control units (ECUs), which connect with the power IC output terminals. Therefore, the intelligent power IC developed here can reduce ECU component numbers and hence ECU size, and is applicable to various kinds of ECUs and smart actuators with high reliability at lower cost.
Citation: Kuzuhara, T., Himi, H., Takahashi, S., Iwamori, N. et al., "Intelligent Power IC for Automotive Electronics, Using Trench-Dielectric-Isolation Technology," SAE Technical Paper 2005-01-0564, 2005, https://doi.org/10.4271/2005-01-0564. Download Citation
Affiliated:
Electronics Device R & D Center, Denso Corporation
Pages: 7
Event:
SAE 2005 World Congress & Exhibition
ISSN:
0148-7191
e-ISSN:
2688-3627
Also in:
Automotive Microcontrollers, Volume 2-PT-137, Electrical Wiring Harnesses and Electronics and Systems Reliability-SP-1927, SAE 2005 Transactions Journal of Passenger Cars: Electronic and Electrical Systems-V114-7
Related Topics:
Electronic control units
Sensors and actuators
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