Intelligent Power IC for Automotive Electronics, Using Trench-Dielectric-Isolation Technology 2005-01-0564

We developed an intelligent power IC suitable for automotive applications, which integrated CMOS, Bipolar and LDMOS and which was fabricated on 0.65 μm design rule process. This IC employs trench-dielectric-isolation (TD) technology and power device technology that improves the ESD (Electrostatic Discharge) robustness. TD technology employing an SOI (Silicon On Insulator) wafer and deep trench isolation realizes very narrow isolation width with no parasitic device. It enables the easier mixing of various circuits on a single chip with high integration density. The power device technology of improves ESD robustness, enables reduction in the number of protection devices in automotive Electronic control units (ECUs), which connect with the power IC output terminals. Therefore, the intelligent power IC developed here can reduce ECU component numbers and hence ECU size, and is applicable to various kinds of ECUs and smart actuators with high reliability at lower cost.