A High-Breakdown Voltage n
+
-GaAs/δ (p
+
)-GaInP/n-GaAs Heterojunction Camel-Gate Transistor for Power System Applications
1999-01-2494
A high-breakdown-voltage n+-GaAs/δ (p+)-GaInP/n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency fT of 17 GHz and the maximum oscillation frequency fmax of 33 GHz for a 1×100 um2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.
Citation: Liu, W., Chang, W., Chen, J., Pan, H. et al., "A High-Breakdown Voltage n+-GaAs/δ (p+)-GaInP/n-GaAs Heterojunction Camel-Gate Transistor for Power System Applications," SAE Technical Paper 1999-01-2494, 1999, https://doi.org/10.4271/1999-01-2494. Download Citation
Author(s):
W. C. Liu, W. L. Chang, J. Y. Chen, H. J. Pan, W. C. Wang, K. H. Yu, S. C. Feng
Affiliated:
National Cheng-Kung Univ.
Pages: 6
Event:
34th Intersociety Energy Conversion Engineering Conference
ISSN:
0148-7191
e-ISSN:
2688-3627
Related Topics:
High voltage systems
Transistors
SAE MOBILUS
Subscribers can view annotate, and download all of SAE's content.
Learn More »
