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The Mos Controlled Thyristor (MCT) is a very promising switch device which combines the high power capability of thyristors and the low energy gate control of a MOS device. The MCT has high voltage and high current capabilities and its power dissipation depends on the losses due to turn-on, turn-off and conduction. This paper describes the potential of indirect liquid cooling to remove the waste heat generated while a MCT is operating at various power levels and switching frequencies. An MCT device dissipated 187 W. The switching mode was cooled to keep the junction temperature below 150°C by using the Venturi cooling technique.

This paper describes the potential of indirect liquid cooling to remove the waste heat generated while a MOS controlled thyristor (MCT) is operating at various power levels and switching frequencies. An MCT is mounted on a copper heat exchanger which is capable of removing up to 50 W of heat while maintaining the case temperature of the MCT below 50°C. At low switching frequencies, the MCT operates as expected at an applied voltage of 90 and 270 V. However, at 270 V, the device fails after a few minutes of continuous operation when the switching frequency is increased to 10 kHz.