Search Results

This paper presents two newly developed technologies of optimizing impurity diffusion concentration for silicon semiconductor material and controlling internal stress of the top SiN (Silicon Nitride) layer on a membrane of a silicon substrate to apply them to the manufacturing process of MEMS (Micro Electro Mechanical Systems) type air-flow sensor chips. Until today, in MEMS-type airflow sensors, poly-crystalline silicon (poly-Si) and platinum were widely used as a resistor material of key functional elements on a membrane of air-flow-rate measurement portion. The functional resistors on the membrane are required to monitor high temperatures of about 300 °C and to perform the self-heating operations at that temperature range because of the suppression of contaminant deposition by means of evaporation or incineration.