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This paper describes the newly developed processes of low temperature wafer bonding using plasma activation and deep dry silicon etching technologies. Both processes are a new type of “MEMS” (Micro Electro Mechanical System) process technology suitable for automotive pressure sensors. The conventional pressure sensor was a unified unit consisting of a silicon sensor chip and a glass stage. The diced unified unit was cut from a bonded disk of a processed silicon wafer and a glass stage substrate, and the silicon sensor chip incorporated four piezo-resistors, a diaphragm and bipolar-circuit. However, the pressure sensor had difficulty in accurately measuring pressure in the high temperature range because of the thermal strain caused by the thermal expansion coefficient difference between the silicon sensor chip and the glass stage.