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Most of the present electric vehicle (EV) on-board chargers utilize a conventional design, i.e., a boost-type Power Factor Correction (PFC) controller followed by an isolated DC/DC converter. Such design usually yields a ~94% wall-to-battery efficiency and 2~3kW/L power density at most, which makes a high-power charger, e.g., 20kW module difficult to fit in the vehicle. As described in this paper, first, an E-mode GaN HEMT based 7.2kW single-phase charger was built. Connecting three such modules to the three-phase grid allows a three-phase >20kW charger to be built, which compared to the conventional three-phase charger, saves the bulky DC-bus capacitor by using the indirect matrix converter topology. To push the efficiency and power density to the limit, comprehensive optimization is processed to optimize the single-phase module through incorporating the GaN HEMT switching performance and securing its zero-voltage switching.

Most of the present EV on-board chargers utilize a three-stage design, e.g., AC/DC rectifier, DC to high-frequency AC inverter, and AC to DC rectifier, which limits the wall-to-battery efficiency to ∼94%. To further increase the efficiency and power density, a matrix converter is an excellent candidate directly converting grid AC to high-frequency AC thereby saves one stage. However, its control complexity and the high cost of building the back-to-back switches are barriers its acceptance. Instead, this paper adopts the 650V E-mode GaN HEMTs to build a level-2 on-board charger using the indirect matrix topology. The input voltage is 80∼260VAC, the battery voltage is 200∼500VDC and the rated power is 7.2kW. Variable switching frequency is combined with phase-shift control to realize the zero-voltage switching. To further increase the system efficiency, four GaN HEMTs are paralleled to form one switching module with a novel gate-drive technology.