Journal Article
High Temperature, High Energy Density Dielectrics for Power Electronics Applications
2012-10-22
2012-01-2208
Mn and/or rare earth-doped xCaTiO₃ - (1-x)CaMeO₃ dielectrics, where Me=Hf or Zr and x=0.7, 0.8, and 0.9 were developed to yield materials with room temperature relative permittivities of Εr ~ 150-170, thermal coefficients of capacitance (TCC) of ± 15.8% to ± 16.4% from -50 to 150°C, and band gaps of ~ 3.3-3.6 eV as determined by UV-Vis spectroscopy. Un-doped single layer capacitors exhibited room temperature energy densities as large as 9.0 J/cm₃, but showed a drastic decrease in energy density above 100°C. When doped with 0.5 mol% Mn, the temperature dependence of the breakdown strength was minimized, and energy densities similar to room temperature values (9.5 J/cm₃) were observed up to 200°C. At 300°C, energy densities as large as 6.5 J/cm₃ were measured. These observations suggest that with further reductions in grain size and dielectric layer thickness, the xCaTiO₃ - (1-x)CaMeO₃ system is a strong candidate for integration into future power electronics applications.
