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This paper presents two newly developed technologies of optimizing impurity diffusion concentration for silicon semiconductor material and controlling internal stress of the top SiN (Silicon Nitride) layer on a membrane of a silicon substrate to apply them to the manufacturing process of MEMS (Micro Electro Mechanical Systems) type air-flow sensor chips. Until today, in MEMS-type airflow sensors, poly-crystalline silicon (poly-Si) and platinum were widely used as a resistor material of key functional elements on a membrane of air-flow-rate measurement portion. The functional resistors on the membrane are required to monitor high temperatures of about 300 °C and to perform the self-heating operations at that temperature range because of the suppression of contaminant deposition by means of evaporation or incineration.

We have developed a novel wafer process for capacitive sensing accelerometer using surface Micro Electrical Mechanical Systems (MEMS) technology and successfully applied to the fabrication process. Our new process combines with a single crystal SOI (Si on Insulator) wafer, high aspect ratio silicon etching and newly developed anhydrous HF/Alcohol etch process of silicon oxides. Although wet conditions such as HF/water etch occurs stiction of mobile structure, our anhydrous HF/Alcohol etch process technology occurs no stiction of mobile structures, because of gas phase (dry) process. In our process, we have achieved smaller-sized sensor chip compared to our conventional 2 axes accelerometer.